Potential drop across the oxide and depletion region.Positive charge on gate terminates on negative charges in depletion region.â â â â â â â â â Body (p-type substrate) â â â â â â â â Depletion: VFB< VT Essentially a parallel plate capacitor.NMOS ï p-type substrate, PMOS ï n-type substrate Oxide (SiO2) Very Thin! University of California, BerkeleyÄ«ody (p-type substrate) Accumulation: VGB ![]() ![]()
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